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| NJG1302V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1302V is a GaAs MMIC designed mainly for the final stage power amplifier of Japanese PHS handset, but suitable digital wireless phone and wireless LAN. This amplifier has wide variable gain capability of 20dB dynamic range. NJG1302V has input and output matching circuits internally and features low voltage and high efficiency operation. The output power of 21dBm is easily available with very low distortion. nPACKAGE OUTLINE NJG1302V nFEATURES lVoltage gain under low distortion lLow voltage operation lLow current consumption lHigh gain lLow distortion (ACP) lReduction of Parasitic oscillation lInput and output internal matching circuit lPackage nPIN CONFIGURATION V Type (Top View) 1 2 3 4 5 6 7 +3.0V typ. 195mA typ. @f=1.9GHz, POUT=21dBm 32dB -60dBc typ. @f=1.9GHz, POUT=21dBm SSOP14 (Package size: 5.0x6.4x1.25mm) 14 13 12 11 10 9 8 Pin connection 1. RFIN 2. GND 3. VGG1 4. GND 5. VCONT 6. GND 7. VGG2 8. RFOUT 9. GND 10. VDD2 11. GND 12. VDD1 13. GND 14. GND -1- NJG1302V nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Gate Voltage Gain Control Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL VDD1, VDD2 VGG1, VGG2 VCONT PIN PD Topr Tstg CONDITIONS VGG1, VGG2 =-0.9V VDD1, VDD2=3.0V VDD1, VDD2=3.0V VDD1, VDD2=3.0V, VGG1, VGG2 =-0.9V At on PCB board (Ta=+25C, Zs =Zl=50? ) RATINGS UNITS 6 -4 -4 3 600 -30~+85 -40~+150 V V V dBm mW C C nELECTRICAL CHARACTERISTICS PARAMETER Operating Frequency Drain Voltage Gate Voltage Idle Current *1 Operating Current *1 Gate Current *2 Gain Control Terminal Current Gain Control Voltage Small Signal Gain Gain Flatness Gain Control Range Pout at 1dB Compression point Adjacent Channel Leakage Power 1 Adjacent Channel Leakage Power 2 Harmonics Input VSWR Load VSWR Tolerance SYMBOL freq VDD1, 2 VGG1, 2 Iidle IDD IGG ICONT VCONT Gain Gflat GCONT P-1dB Pacp1 VDD1, 2=3.0V, Iidle=180mA VDD1, 2=3.0V, Iidle=180mA VCONT =-2~0V, VDD1, 2=3.0V Iidle=180mA VDD1, 2=3.0V VDD1, 2=3.0V, POUT=21dBm offset=600kHz, PIN ; /4 DQPSK VDD1, 2=3.0V, POUT=21dBm offset=900kHz, PIN ; /4 DQPSK VDD1, 2=3.0V, POUT=21dBm VDD1, 2=3.0V VDD1, 2=3.0V, POUT=21dBm Load VSWR=4:1, All Phase VDD1, 2=3.0V, Iidle=180mA VDD1, 2=3.0V, No RF Signal VDD1, 2=3.0V, POUT=21dBm VDD1, 2=3.0V, POUT=21dBm VDD1, 2=3.0V, POUT=21dBm -2.0 - -65 -35 - -60 -30 2.2 dBc dBc Parasitic Oscillation for Fundamental Signal Level : <-60dBc = *1: VDD1 Terminal VDD2 Terminal Total Current *2: VGG1 Terminal VGG2 Terminal Total Current -2- NJG1302V nTYPICAL CHARACTERISTICS Pacp vs. Operating Current vs. VDD (P -50 out Gain vs. Frequency vs. Control Voltage (VDD=3.0V, DD=180mA, T =25 C) I a 40 V CONT=0V o =21dBm, V cont =0V, f=1.9GHz, T =25 oC) a 30 -55 20 -1.0V 10 -1.4V 0 (d Bc) P Pacp(dBc) Gain (dB) V -60 DD =2.9V 3.0V 3.3V acp -65 4.0V 5.0V -10 0.0 1.0 2.0 3.0 -70 150 160 170 180 DD 190 (mA) 200 210 Frequency f (GHz) Operating Current I Output Power vs. Input Power vs. Control Voltage (V =3.0V, I DD idle =180mA, f=1.9GHz, T =25 C) a o 26 V 24 (dBm) 22 20 -1.4V CONT =0V -1V -1.2V Output Power P out 18 16 14 12 -20 -15 -10 -5 0 Input Power P (dBm) in 5 10 P acp -20 -30 -40 vs. Input Power vs. Control Voltage (V DD =3.0V, I idle =180mA, f=1.9GHz, T =25 C) a o VCONT=0V -1V Pacp (dBc) -50 -1.4V -60 -70 -1.2V -80 -90 -20 -15 -10 -5 0 Input Power P (dBm) in 5 10 -3- NJG1302V nTYPICAL CHARACTERISTICS Gain, P (V =3.0V, V DD acp vs. Ambient Temperature idle cont =0V, I =180mA, P out =21dBm, f=1.9GHz) -55 34 33 Gain (dB) Gain 32 -60 (dBc) Operatin Current I DD 31 Pacp 30 -40 -65 -20 0 20 40 o 60 80 Ambient Temperature aT( C ) Operating Current, P (V DD acp vs. Control Voltage o in a Operating Current vs. Ambient Temperature (V =3.0V, V DD cont =3.0V, I idle =180mA, f=1.9GHz, P =-11dBm, T =25 C) -20 =0V, I idle =180mA, P out =21dBm, f=1.9GHz) 250 190 (mA) (mA) 185 DD Operating Current I I DD Operating Current I Pacp (dBc) DD 200 -40 180 150 P acp -60 175 100 -2 -1.5 -1 -0.5 0 0.5 Control Voltage CONT (V) V -80 170 -40 -20 0 20 40 a 60 80 Ambient Temperature T(oC ) Gain vs PHS Band Frequency vs. Control Voltage (V 50 DD Gain, Operating Current vs. V (Vcont=0V, I idle =180mA@V 33 DD DD o =3.0V, I DD =180mA, T =25 C) a o =3.6V, P out =21dBm, f=1.9GHz, T a=25 C) 240 40 32 IDD V Gain (dB) 30 CONT =0V Gain (dB) 31 200 20 -1.0V 10 -1.4V 0 1.89 30 Gain 180 1.9 1.91 1.92 29 2.5 3 3.5 4 DD Frequency f (GHz) 160 4.5 (V) 5 Drain Voltage V -4- (mA) 220 P acp NJG1302V nTYPICAL CHARACTERISTICS Output Power,Total Current vs. Input Power (V 25 DD2,3 Output Power, P.A.E. vs. Input Power (V DD2,3 =3V, V CONT =0V, f=1.9GHz, T =25 C) a 350 300 25 o =3V, V CONT =0V, f=1.9GHz, T =25 C ) a 100 o Output Power @I =80mA idle Output Power @I =80mA idle (dBm) Total Current (mA) 40mA 15 out out 20mA Total Current @Ii d l e =80mA 60mA 250 200 150 100 50 0 40mA 20mA 15 60 P.A.E. @I =80mA 10 idle 10 40 40mA 5 60mA 40mA 5 20 20mA 0 -25 -20 -15 -10 -5 in 20mA 0 -25 -20 -15 -10 -5 in 0 0 5 10 0 5 10 Input Power P (dBm) Input Power P (dBm) |S | , |S | vs. Frequency 11 22 (V =3.0V, I DD DD =180mA, V cont =0V, T =25 C) a o 20 10 |S 11| , |S 22| (dB) 0 |S22| -10 |S11| -20 -30 0 1 2 3 Frequency f (GHz) All adjacent channel leakage power used in these evaluations are those of 600kHz offset from fundamental wave at PHS operating condition(? /4QPSK moduration) -5- Power Added Efficiency (%) 20 60mA (dBm) 20 60mA 80 Output Power P Output Power P NJG1302V nRECOMMENDED CIRCUIT RFin GND RFin 2 GND GND 13 14 1 VGG (-0.5~-1.2V) IDD =0 @VGG <-2V = Vcont (0~-2V) C1 C1 C2 3 VGG1 4 GND VDD1 GND 12 C2 11 C1 VDD (3.0~5.0V) 5 Vcont 6 GND VDD 2 GND 10 L1 9 C2 C1 C3 7 C3 C2 C1 VGG2 RFout 8 RFout C1: 1000pF C2: 33pF C3: 1uF L1: 4.7nH nRECOMMENDED PCB DESIGN PCB : FR4 t=0.2mm CAPACITOR MURATA GRM39 Series 1uF INDUCTOR TAIYO-YUDEN HK1608 Series 1uF 4.7uF The reflow method is recommended for this device to attach on PCB -6- NJG1302V nAPPLICATION CIRCUIT (NEGATIVE VOLTAGE GENERATOR) +3.0V -3.0V 8 10uF + 10kTrimmer Resistance (7k) VGG (-0.9V Typ.) (3k) NJU7660 1 + - 10uF +V 1M 1M VCONT (0~+2V) 2 7 NJU7001 6 out VCONT (0~-2V) 3 500k 4 -V -7- NJG1302V nPACKAGE OUTLINE (SSOP14) + 0.3 5.0 - 0.1 0~ 10 14 8 4 .4 0 .2 6 .4 0 .3 1 0.65 7 +0.1 0.67MAX 1 .1 5 0 .1 0.15 0.05 - 0.1 0.220.1 0.1 M Lead material Lead surface finish Molding material UNIT Weight 0 .5 0. 2 : Copper : Solder plating : Epoxy resin : mm : 66mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. 0. 1 0 .1 [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -8- |
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